Bormontov, E. N., Kitin, D. V., Kursheva, E. N. (1989), Method of Polishing Etching of Zincum Diarsenid, patent no. 1715126 MKI HO1L 21/265 of 13/06/1989.
Petrov, B. K., Kursheva, E. N., Gvozdevskaya, N. G. (1991), 'Simulation of the High Frequency Current Distribution In Power Microwave Balance Transistors', Proceedings of the 3rd Conference, Physical Basis of Semiconductor Devices Reliability and Degradation, Kishinev, p. 78.
Petrov, B. K., Kursheva, E. N., Gvozdevskaya, N. G. (1992), 'Influence of the Construction Elements On the Input Base Inductivity of a Pulse Balance Transistor with Common Base', Proceedings of the 8th Conference, State and Ways of Increasing the Video Type-Recorders Reliability, Voronezh, pp. 39-40.
Petrov, B. K., Kursheva, E. N., Gvozdevskaya, N. G. (1993), Physical Limitatious of Collector Power of the Microwave Bipolar Transistors, Voronezh State University, deposited in the Russian Institute of Scientific Investigation and Technical Information (RISITI) N3012 - B93, 8 pp.
Petrov, B. K., Kursheva, E. N. (1993), Features of the Avalanche Breakdown In Planar Transistors, Voronezh State University, deposited in the Russian Institute of Scientific Investigation and Technical Information (RISITI) N3011 -B93, 8 pp.
Petrov, B. K., Kursheva, E. N. (1993), 'Technique of Breakdown Voltage Increasing In the Silicon Planar High Frequency Transistors', Proceedings of the 7th Conference, State and Ways of Increasing the Video Type-Recorders Reliability, Voronezh, pp. 42-43.
Petrov, B. K., Kursheva, E. N. (1993), 'Influence of Physical Factors On the Breakdown Voltage In Planar Transistor Structures of the Power Microwave Hybrid Integrated Circuits', Proceedings of the International Conference, Physical Basis of Reliability, Diagnostic Facilities and Methods of Integrated Circuits, Voronezh, pp. 10-11.
Kursheva, E. N., Petrov, B. K. (1994), 'Field and Voltage Distribution Simulation of Planar Transistor Structures with Different Configuration Guard and Field Limiting Rings', Proceedings of the Third International Seminar on Simulation of Devices and Technologies, Obninsk, 1994, pp. 58-59.
Kursheva, E. N., Petrov, B. K. (1994), 'High Voltage Semiconductor Structures Simulation', Proceedings of the 9th International Conference of Physics Students and Postgraduates, St. Petersburg, pp. 63-66.
Kursheva, E. N., Petrov, B. K. (1994), 'Influence of Diffusion Parameters on the Avalanche Breakdown Voltage of Silicon P-N Junctions of High Voltage Bipolar and MOS Transistors', in Physics and Technology of Materials For Electronic Engineering, Voronezh, pp. 121-124.
Kursheva, E. N., Petrov, B. K. (1994), 'Influence of the Real 2 Dimensional Impurity Distribution' in a Guard Ring on the Breakdown Voltage of Silicon P-N Junctions in Silicon High Voltage Transistors', Proceedings of the 8th Conference, State and Ways of Increasing the Video Type-Recorders Reliability, Voronezh, pp. 74-75.
Petrov, B. K., Kursheva, E. N., Gvozdevskaya, N. G. (1994), 'Design Features of High Frequency Generator Transistors', Proceedings of the 8th Conference, State and Ways of Increasing the Video Type-Recorders Reliability, Voronezh, pp. 70-71.
Kursheva, E. N., Petrov, B. K. (1994), 'Increasing of Breakdown Voltage of the Silicon Planar Transistors by Impurity Profiles Regulation', Proceedings of the 8th Conference, State and Ways of Increasing the Video Type-Recorders Reliability, Voronezh, pp. 63-65.
Kursheva, E. N., Petrov, B. K. (1994), 'High Voltage Semiconductor Structures Simulation', Abstract of the 9th International Conference of Physics Students and Postgraduates, St. Petersburg, pp. 81-82.
Kursheva, E. N., Petrov, B. K. (1995), 'Simulation of Power DMOS Transistor Structures', Proceedings of the 10th International Conference of Physics Students and Postgraduates, Copenhagen, pp. 42-43.
Kursheva, E. N., Petrov, B. K. (1995), Simulation of the Semiconductor Structures with the Imperfect Cylindrical Configuration of Guard Rings, Voronezh State University, deposited in the Russian Institute of Scientific Investigation and Technical Information (RISITI) N2802-B95, 6 pp.
Kursheva, E. N., Petrov, B. K. (1995), Calculation of Breakdown Voltages of Power High Voltage DMOS Transistors, Voronezh State University, deposited in the Russian Institute of Scientific Investigation and Technical Information (RISITI) N2801-B95, 5 pp.
Kursheva, E. N., Petrov, B. K. (1995), Influence of Surface Oxide Charges On the Breakdown Voltages of the Structures with Field Limiting Rings , Voronezh State University, deposited in the Russian Institute of Scientific Investigation and Technical Information (RISITI) N2800-B95, 6 pp.
Kursheva, E. N., Petrov, B. K. (1995), Power DMOS Transistors On-Resistance Calculation Technique, Voronezh State University, deposited in the Russian Institute of Scientific Investigation and Technical Information (RISITI) N2803-B95, 11 pp.
Kursheva, E. N., Petrov, B. K. (1995), 'Optimisation of the Field Limiting Rings Parameters In the Power High Voltage Mos Transistors', Proceedings of the 9th Conference, State and Ways of Increasing the Video Type-Recorders Reliability, Voronezh, pp. 71-72.
Kursheva, E. N., Petrov, B. K. (1995), 'Increasing of the Power MOS Transistors Stability To Avalanche Breakdown', Proceedings of the 9th Conference, State and Ways of Increasing the Video Type-Recorders Reliability, Voronezh, pp. 70-71.
Kursheva, E. N., Petrov, B. K. (1995), '2-Dimensional Calculation of the Electric Field Distribution Between Diffusive P-Regions In the Power DMOS Transistors', Proceedings of the 3rd Conference of Russian Students and Postgraduate Students Physicists, Ekaterinburg, pp. 38-39.
Kursheva, E. N., Petrov, B. K. (1995), 'Influence of the New Impurity Profiles on Breakdown Voltage', Proceedings of the International Conference, Electrotechnical Materials and Components, Alushta, p. 51.
Kursheva, E. N., Petrov, B. K. (1996), 'Optimization of the Planar P-N Junction Periphery in Power High Voltage Semiconductor Devices', Journal of Technical Physics, v. 66, N7, pp. 203-206.
Kursheva, E. N., Petrov, B. K. (1996), 'Simulation of High Voltage Semiconductor Structures with Field Limiting Rings', Proceedings of the 10th Conference, State and Ways of Increasing the Video Type-Recorders Reliability, Voronezh, pp. 70-71.
Petrov, B. K., Kursheva, E. N., Minim, L. A., Gribkov A. S. (1996), 'Simulation of the Static and Switching Current-Voltage Characteristics of the Insulated Gate Bipolar Transistor', Proceedings of the 10th Conference, State and Ways of Increasing the Video Type-Recorders Reliability, Voronezh, pp. 71-72.
Kursheva, E. N., Petrov, B. K. (1996), 'Optimisation of On-Resistance in Power DMOS Transistors', St Petersburg Journal of Electronics, N4, pp. 50-54.
Kursheva, E. N., Petrov, B. K., Kharitonova, J. S. (1996), 'Numerical Simulation of Semiconductor Devices with Different Configuration Reverse-Biased P-N Junctions', Proceedings of the 4th Conference of Russian Students and Postgraduate Students Physicists, Ekaterinburg, p. 63.
Nickolaenkov, Y. K. , Petrov, B. K., Kursheva, E. N. (1996), 'Switching Characteristics of the Power Insulated Gate Bipolar Transistor', Proceedings of the Fifth International Seminar, On Simulation of Devices and Technologies, Obninsk, pp. 40-41.
Kursheva, E. N., Petrov, B. K. (1996), 'Numerical Analysis of the Static and Switching Processes In the Insulated Gate Bipolar Transistor', Proceedings of the 11th International Conference of Physics Students and Postgraduates, Zeged, Hungary, pp. 83-84.
Kursheva, E. N., Petrov, B. K. (1996), 'Application of the Finit Elements Method For Calculation of the DMOS Transistor On-Resistance ', Proceedings of the International Conference, Electrotechnical Materials and Components, Alushta, p. 49.
Petrov, B. K., Kursheva, E. N., Minim, L. A., Gribkov, A. S. (1996), 'Simulation of the Insulated Gate Bipolar Transistor Characteristics', Proceedings of the Conference, Microelectronics and Informatics, Moscow, p. 16.
Kursheva, E. N., Petrov, B. K. (1996), 'Increasing of the Breakdown Voltages in DMOS Transistors by Different Configuration of Guard Rings', Proceedings of the 3rd Conference, Actual Problems of Solid State Electronics and Microelectronics, Divnomorskoe, pp. 139-141.
Kursheva, E. N., Petrov, B. K. (1997), 'Numerical Simulation of Reverse-biased Planar P-N Junctions', in Educational Technologies, Issue 3, pp.37-41.
Kursheva, E. N., Petrov, B. K. (1997), 'Guarantee of Necessary Breakdown Voltages in Power High Voltage Transistor Structures by Different Configuration of Guard Ring', in Elements and devices of microelectronic apparatus, Voronezh, pp. 60-64.
Kursheva, E. N., Petrov, B. K. (1997), Numerical Methods of Calculation of Planar P-N Junctions, Methodical Directions, Voronezh State University, 26 pp.
Kursheva, E. N., Petrov, B. K., Kharitonova J. S. (1998), 2-Dimensional Simulation of Planar P-N Junctions, Voronezh State University, deposited in the Russian Institute of Scientific Investigation and Technical Information (RISITI) N1817-B98 , 31pp.
Kursheva, E. N. (1999), Numerical Simulation of Static Characteristics of Insulate Gate Bipolar Transistor (IGBT), Voronezh State University, deposited in the Russian Institute of Scientific Investigation and Technical Information (RISITI) N2819-B99, 30 pp.
Kursheva, E. N., Petrov, B. K. (1999), 'Stability of Power DMOS Transistor Structures to the Phenomenon of Avalanche Breakdown Voltage ', Proceedings of Russian Universities. Electronics, N6, pp. 62-66.
Kursheva, E. N. (2000), 'Computering of Psychodiagnostics Methods', in New Computer Technologies in Education, Voronezh, pp.118-120.
Kursheva, E. N. (2000), Theoretical Informatics, Manual book, Voronezh State Pedagogical University, 52 pp.
Kursheva, E. N. (2001), 'Numerical Simulation of Switch Characteristics of Insulated Gate Bipolar Transistor (IGBT)', in Educational Technologies, Issue 7, Voronezh, pp. 95-98.